کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1797082 1023765 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Sb as surfactant at plastic relaxation of GeSi/Si(0 0 1) films grown by molecular-beam epitaxy: Reduction of surface roughness value
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Sb as surfactant at plastic relaxation of GeSi/Si(0 0 1) films grown by molecular-beam epitaxy: Reduction of surface roughness value
چکیده انگلیسی
Plastically relaxed GeSi films with a fraction of Ge ranging from 0.19 to 0.29 are grown on Si(0 0 1) substrates with the use of a low-temperature (350 °C) buffer layer of Si. Their root mean square (RMS) surface roughness is in the 1.7-2.7 nm range. Addition of Sb as a surfactant smoothing the surface of the stressed film during its growth is shown to reduce the surface roughness of the plastically relaxed heterostructure. The RMS roughness lower than 1 nm is reached for a film with a 0.29 fraction of Ge and a threading dislocation density close to 106 cm−2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 297, Issue 1, 15 December 2006, Pages 57-60
نویسندگان
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