کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1797140 | 1023769 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Crystal growth and characterization of thick GaN layers grown by oxide vapor transport technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Single-crystal GaN layers of 20–40 μm thickness were grown in an oxide transport process using a mixture of commercially available Ga2O3 powder and graphite powder as precursors. Ammonia was used as the source of nitrogen in these experiments. A two-flow design was used to perform these experiments, in which, the nitrogen carrier gas was passed through the powder to transport the resulting gallium suboxide (Ga2O) towards the seed crystal. The GaN layers thus obtained from the processes were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), and reciprocal space mappings. XRD patterns showed that the grown GaN layers are single crystals oriented along c-direction with wurtzite structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 289, Issue 1, 15 March 2006, Pages 140–144
Journal: Journal of Crystal Growth - Volume 289, Issue 1, 15 March 2006, Pages 140–144
نویسندگان
Phanikumar Konkapaka, Balaji Raghothamachar, Michael Dudley, Yuri Makarov, Michael G. Spencer,