کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1797255 | 1023775 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Mosaic structure in InN layers grown by metalorganic chemical vapor deposition at various temperatures has been investigated by X-ray diffraction (XRD). With a combination of Williamson-Hall measurement and fitting of twist angles, it was found that variation of growth temperature from 450 to 550 °C leads to the variation of the lateral coherence length, vertical coherence length, tilt and twist of mosaic blocks in InN films in a, respectively, monotonic way. In particular, mosaic tilt increases whereas mosaic twist decreases with elevating temperature. Atomic force microscopy shows the morphological difference of the InN nucleation layers grown at 450 and 550 °C. Different coalescence thickness and temperature-dependent in-plane rotation of InN nuclei are considered to account for the XRD results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 293, Issue 2, 1 August 2006, Pages 269-272
Journal: Journal of Crystal Growth - Volume 293, Issue 2, 1 August 2006, Pages 269-272
نویسندگان
Y. Huang, H. Wang, Q. Sun, J. Chen, D.Y. Li, J.C. Zhang, J.F. Wang, Y.T. Wang, H. Yang,