کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1797415 | 1023789 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Extended defects in Si films epitaxially grown by low-temperature ECRCVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Extended defects in Si films epitaxially grown by low-temperature ECRCVD Extended defects in Si films epitaxially grown by low-temperature ECRCVD](/preview/png/1797415.png)
چکیده انگلیسی
Si films grown epitaxially by low-temperature electron-cyclotron resonance chemical-vapor deposition (ECRCVD) were investigated by analyzing extended defects in these films. Extended defects were made visible by Secco etching and scanning (SEM) and transmission (TEM) electron microscopy were used to analyze them in detail. Films grown on Si(1 0 0) wafers show different kinds of etch pits with characteristic shapes, sizes and crystallographic alignments. Their correlation to crystallographic defects is discussed. The typical total etch pit density for boron-doped samples grown at 580 °C on Si wafers is in the range of 108 cmâ2. Films grown on poly-Si seed layers on glass are strongly affected by Secco etch due to growth regions of different structural qualities and a high density of extended defects. Solar cell test structures were prepared from both types of samples and their results discussed in view to the density of extended defects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 287, Issue 2, 25 January 2006, Pages 433-437
Journal: Journal of Crystal Growth - Volume 287, Issue 2, 25 January 2006, Pages 433-437
نویسندگان
B. Rau, K. Petter, I. Sieber, M. Stöger-Pollach, D. Eyidi, P. Schattschneider, S. Gall, K. Lips, W. Fuhs,