Estimation of band gap of muscovite mineral using thermoluminescence (TL) analysis

In this article thermoluminescence (TL) mechanism in muscovite mineral has been reported in detail. The trap spectroscopy of the mineral has been studied from the TL glow curve of X-ray irradiated sample. A stable TL peak has been observed at around 347 K in the glow curve, however after annealing the sample above 573 K an additional peak is observed at around 408 K. In the TL emission spectra an emission peak has been observed at around 447 nm at TL peak maximum temperatures. The glow curves are analyzed by Tm−Tstop analysis, peak shape method and fractional glow technique. Analyses showed that there is a trap center and a radiative recombination center at depth around 0.71 and 2.78 eV from the conduction band. These two localized centers do not affected by annealing up to 773 K. However, annealing at 573 K (or above) a new electron trap center was found to generate at depth around 1.23 eV. This significant result has been confirmed with the help of phototransfer phenomena observed under UV irradiation. Due to UV irradiation on the excited sample, the transfer of trapped charges from the deeper trap level (1.23 eV) to the shallow level (0.71 eV) has been observed. Based on the analysis a schematic band diagram of muscovite crystal has been proposed. With the help of the band model, radiative as well as non-radiative recombination mechanisms have been discussed. The band gap of the material has been estimated to be around 5.09 eV and verified.

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