Quantum theory of the effect of grain boundaries on the electrical conductivity of thin films and wires

We calculate the electrical conductivity of a metallic sample under the effects of distributed impurities and a random distribution of grain boundaries by means of a quantum mechanical procedure based on Kubo formula. Grain boundaries are represented either by a one-dimensional regular array of Dirac delta potentials (Mayadas and Shatzkes model) or by its three-dimensional extension (Szczyrbowski and Schmalzbauer model). We give formulas expressing the conductivity of bulk samples, thin films and thin wires of rectangular cross-sections in the case when the samples are bounded by perfectly flat surfaces. We find that, even in the absence of surface roughness, the conductivity in thin samples is reduced from its bulk value. If there are too many grain boundaries per unit length, or their scattering strength is high enough, there is a critical value Rc of the reflectivity R   of an individual boundary such that the electrical conductivity vanishes for R>RcR>Rc. Also, the conductivity of thin wires shows a stepwise dependence on R. The effect of weak random variations in the strength or separation of the grain boundaries is computed by means of the method of correlation length. Finally, the resistivity of nanometric polycrystalline tungsten films reported in Choi et al. J. Appl. Phys. (2014) 115 104308 is tentatively analyzed by means of the present formalism.