کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1809489 | 1525197 | 2014 | 5 صفحه PDF | دانلود رایگان |
Resistive switching (RS) effect in the double-layered structure of Pt/Pr0.7Ca0.3MnO3 (PCMO)/La0.6Pr0.4MnO3 (LPMO)/SrNb0.01Ti0.99O3 (SNTO) are improved comparing with that in the single-layered structure of Pt/PCMO/SNTO. We propose that the RS characteristics of the two structures depend on the electronic properties of the depletion layer formed in PCMO layer with negative space-charge near the interface of PCMO and LPMO (or SNTO), which should be caused by the migration of oxygen vacancies. Our numerical results show that the negative space-charge region formed in the whole LPMO layer in Pt/PCMO/LPMO/SNTO causes an increase of the electric field, which results in the increase of the number of oxygen vacancies to migrate and thereby improving the RS effect.
Journal: Physica B: Condensed Matter - Volume 449, 15 September 2014, Pages 52–56