کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1811128 | 1025581 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment](/preview/png/1811128.png)
چکیده انگلیسی
Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20-300 K. However, L-DLTS with its higher resolution enabled the splitting of two narrowly spaced emission rates. Consequently four electron traps at, EC-0.33 eV, EC-0.36 eV, EC-0.38 eV and EC-0.56 eV were observed in the control sample. Following hydrogenation, all these traps were passivated with a new complex (presumably the M3), emerging at EC-0.58 eV. Isochronal annealing of the passivated material between 50 and 300 °C, revealed the emergence of a secondary defect, not previously observed, at EC-0.37 eV. Finally, the effect of hydrogen passivation is completely reversed upon annealing at 300 °C, as all the defects originally observed in the reference sample were recovered.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 406, Issue 11, 15 May 2011, Pages 2273-2276
Journal: Physica B: Condensed Matter - Volume 406, Issue 11, 15 May 2011, Pages 2273-2276
نویسندگان
C. Nyamhere, J.R. Botha, A. Venter,