کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1813308 | 1525241 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
It has been revealed that self-interstitials formed under low intensity electron irradiation in high resistivity p-type silicon can be retained frozen up to room temperature. Low thermal mobility of the self-interstitials suggests that Frenkel pairs in silicon can be stable at temperatures of about or higher than 100 K. A broad DLTS peak with activation energy of 0.14–0.17 eV can be identified as related to Frenkel pairs. This peak anneals out at temperatures of 120−140 K. Experimental evidences are presented that becoming more mobile under forward current injection the self-interstitials change their charge state to a less positive one.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 404, Issues 23–24, 15 December 2009, Pages 4561–4564
Journal: Physica B: Condensed Matter - Volume 404, Issues 23–24, 15 December 2009, Pages 4561–4564
نویسندگان
L.F. Makarenko, S.B. Lastovski, F.P. Korshunov, L.I. Murin, M. Moll,