کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1813315 1525241 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electron spin resonance of palladium-related defect in silicon
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Electron spin resonance of palladium-related defect in silicon
چکیده انگلیسی

A different Pd-related defect from a substitutional Pd with (C2v) symmetry was detected by ESR measurement. New ESR signal of the Pd-related defect showed different g-value and symmetry from those of the substitutional Pd. The Pd-related defect has anisotropic character of monoclinic (C1h) symmetry. The calculated g-values are g1=1.97, g2=2.03, g3=2.16, and the g1 axis is along 〈1 1 0〉 direction. The g2 and g3 axes are perpendicular to the g1 axis, and the g2 axis is rotated from 〈1 0 0〉 to 〈1 1 1〉 direction at the angle of 51°. In addition to the Pd-related defect, we have found other ESR signals in Pd and hydrogen-diffused Si. The ESR signals showed the hyperfine structure of hydrogen. Therefore, it is though that the ESR signals are originated from Pd–H complex defect.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 404, Issues 23–24, 15 December 2009, Pages 4586–4589
نویسندگان
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