کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1813329 | 1525241 | 2009 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Homogenization of CZ Si wafers by Tabula Rasa annealing Homogenization of CZ Si wafers by Tabula Rasa annealing](/preview/png/1813329.png)
The precipitation of interstitial oxygen in Czochralski grown silicon has been investigated by infrared absorption spectroscopy, chemical etching, transmission electron microscopy and X-ray diffraction after application of homogenization annealing process called Tabula Rasa. The influence of this homogenization step consisting in short time annealing at high temperature has been observed for various temperatures and times. The experimental results involving the interstitial oxygen decay in Si wafers and absorption spectra of SiOxSiOx precipitates during precipitation annealing at 1000∘C were compared with other techniques for various Tabula Rasa temperatures. The differences in oxygen precipitation, precipitate morphology and evolution of point defects in samples with and without Tabula Rasa applied is evident from all used experimental techniques. The results qualitatively correlate with prediction of homogenization annealing process based on classical nucleation theory.
Journal: Physica B: Condensed Matter - Volume 404, Issues 23–24, 15 December 2009, Pages 4637–4640