کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1814279 | 1525258 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low-temperature visible photoluminescence and optical absorption in Tl2In2Se3S semiconductor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The emission band spectra of undoped Tl2In2Se3S layered crystals have been studied in the temperature range of 25-63Â K and the wavelength region of 570-700Â nm. A broad photoluminescence band centered at 633Â nm (1.96Â eV) was observed at T=25Â K. Variation of emission band has been studied as a function of excitation laser intensity in the 2.7-111.4Â mWÂ cmâ2 range. Radiative transitions from shallow donor level located at 0.03Â eV below the bottom of conduction band to deep acceptor level located at 0.23Â eV above the top of the valence band were suggested to be responsible for the observed PL band. From X-ray powder diffraction and optical absorption study, the parameters of monoclinic unit cell and the energy of indirect band gap were determined, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 395, Issues 1â2, 31 May 2007, Pages 116-120
Journal: Physica B: Condensed Matter - Volume 395, Issues 1â2, 31 May 2007, Pages 116-120
نویسندگان
I. Guler, K. Goksen, N.M. Gasanly, R. Turan,