کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1814623 | 1525259 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of annealing on the crystal structure and dielectric properties of Ba0.6Sr0.4TiO3 thick films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of annealing on the crystal structure and dielectric properties of Ba0.6Sr0.4TiO3 thick films Effect of annealing on the crystal structure and dielectric properties of Ba0.6Sr0.4TiO3 thick films](/preview/png/1814623.png)
چکیده انگلیسی
Ba0.6Sr0.4TiO3 (BST) films with different thickness were grown on (0 0 1) MgO substrates by pulsed laser deposition. Effects of thickness and post-deposition annealing on the crystal structure and dielectric properties of BST films are investigated. Enhancement of the crystal structure through post-deposition annealing is analyzed from the viewpoint of energy minimization principle of stable state. The best dielectric properties are obtained for the 500-nm-thick BST film with post-deposition annealing at 1000 °C in flowing O2 atmosphere. Based on the high-quality BST film, a distributed microwave phase shifter was fabricated, and promising high-frequency device performance is achieved.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 393, Issues 1–2, 30 April 2007, Pages 175–178
Journal: Physica B: Condensed Matter - Volume 393, Issues 1–2, 30 April 2007, Pages 175–178
نویسندگان
L.Z. Cao, Q.D. Meng, W.Y. Fu, S.F. Wang, M. Lei, B.L. Cheng, Y.L. Zhou, Z.H. Chen,