کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1814981 1525254 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Radiotracer study of cobalt diffusion and solubility in electronic-grade germanium wafers
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Radiotracer study of cobalt diffusion and solubility in electronic-grade germanium wafers
چکیده انگلیسی
The diffusion rate of Co in Ge is found to be as fast as 2×10-6cm2s-1 at 900 °C, whereas the Co solubility comes close to 1×1016cm-3 at the same temperature. Based on these properties and its acceptor activity, Co may cause serious contamination problems during the fabrication of Ge-based electronic devices. In contrast to an early radiotracer study [L.Y. Wei, J. Phys. Chem. Solids 18 (1961) 162], we observe common diffusion profiles of complementary error function type, which are indicative of a constant diffusivity depending only on temperature. A preliminary analysis of the data points to the dissociative diffusion mechanism involving interstitial-substitutional exchange via vacancies. However, in contrast to Cu, which migrates via the vacancy-controlled mode of the dissociative mechanism, the diffusion of Co may be rate-limited by the transport properties of its interstitial modification (Coi).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volumes 401–402, 15 December 2007, Pages 214-217
نویسندگان
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