Thermodynamic properties of defects in CdTe as derived by diffusion experiments

The shape of Ag profiles obtained in CdTe after 111Ag implantation and subsequent annealing strongly depends on the external conditions during the annealing procedure, yielding quite different types of diffusion profiles. By simulating these data quantitative information on different thermodynamical parameters is obtained. At the temperature of 828 K, it turns out that the experimental Ag profiles reflect the distribution of the intrinsic defects after the diffusion anneal. In this way, information on the diffusivity of the intrinsic defects, Cd interstitial and Cd vacancy, is obtained whereas for the Ag impurity only limiting values regarding ionization energy, the diffusivity of interstitially incorporated and the thermal stability of substitutionally incorporated Ag are obtained.