Line defects in epitaxial silicon films grown at 560∘C

We present an investigation of line defects in epitaxially grown silicon layers using Secco defect etching and transmission electron microscopy (TEM). 1μm thick layers were deposited onto Si (1 0 0) wafers at a substrate temperature of 560∘C using electron cyclotron resonance chemical vapour deposition (ECRCVD). Defect etching reveals a variety of etch pits related to extended defects. A detailed analysis of the orientations and shapes of etch pits related to line defects is carried out. Using this information it is then possible to assign different types of etch pits to line defects observed by TEM. The investigations show, that one type of defect are extended dislocations parallel to 〈112〉, while the direction of two other types are 〈110〉 as well as 〈314〉, a direction uncommon for line defects in silicon.