کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
186676 | 459619 | 2013 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Fabrication of microstructures on GaAs with pulsed electrochemical wet stamping Fabrication of microstructures on GaAs with pulsed electrochemical wet stamping](/preview/png/186676.png)
Fabrication of microstructures on gallium arsenide (GaAs) was investigated using electrochemical wet stamping (E-WETS) by limiting a selective anodic dissolution process in the contact area between a stamp and a GaAs substrate. The pre-patterned agarose stamp acts as a current flow and electrolyte channel between a working electrode and a counter electrode. A short potential pulse was applied to improve the precision as well as surface roughness of the fabricated microstructures on GaAs surfaces. The pulse width of 100 μs and pulse-to-pause ratio of 1:3 were selected as optimum machining parameters. Lateral deviation of the fabricated microstructures from those on the master was approximately 1.3%, and the electrochemical etch rate in 0.1 M HBr was approximately 40 μm/h. The results demonstrated that E-WETS was a promising approach to fabricate microstructures on GaAs with high accuracy and efficiency.
Journal: Electrochimica Acta - Volume 111, 30 November 2013, Pages 680–684