کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
186785 459624 2013 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of etching current density on microstructure and NH3-sensing properties of porous silicon with intermediate-sized pores
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Effect of etching current density on microstructure and NH3-sensing properties of porous silicon with intermediate-sized pores
چکیده انگلیسی

In this work, porous silicon with intermediate-sized pores (intermediate–PS) was prepared by using galvanostatic electrochemical etching method and the effect toward sensing response characteristics of NH3 gas was also studied. The morphology and surface chemical bonds of intermediate–PS were characterized by using field emission scanning electron microscope (FESEM) and Fourier transform infrared spectroscopy (FTIR), respectively. The results showed the intermediate–PS microstructure can be significantly modulated by the etching current density. Moreover, the freshly prepared intermediate–PS surface could achieve reliable passivation after storage in ethanol. Furthermore, the gas-sensing measurements of the intermediate–PS sensors were carried out versus different concentrations of NH3. The PS sensor exhibited good NH3-sensing performances at room temperature owing to its unique microstructure features, including large specific surface area and highly ordered pore channels. In addition, the conceivable pore formation mechanism as well as gas sensing mechanism was also discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 108, 1 October 2013, Pages 167–174
نویسندگان
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