Photoelectrochemical performance of CdTe sensitized TiO2 nanotube array photoelectrodes

CdTe and ZnS quantum dots sensitized TiO2 nanotube array photoelectrodes were prepared by depositing CdTe and ZnS QDs on the tube walls of the self-organized TiO2 NTs using successive ionic layer adsorption and reaction (SILAR) technique. The deposition of CdTe and ZnS on the upper and inner surface of the TiO2 NTs was confirmed by field emission scanning electron (FE-SEM) and transmission electron microscopes (TEM). The obtained results indicated that TiO2 NTs photoelectrodes sensitized by CdTe quantum dots for 5 cycles exhibited excellent photoelectrochemical properties, with an open-circuit voltage of 0.95 V and a short circuit current density of 11.15 mA cm−2, and ZnS coating protected the photoelectrodes against photocorrosion.

The average short-circuit photocurrent densities are 0.001, 0.28, and 1.23 mA cm−2 for plain TiO2 NTs, CdTe(5)/TiO2 NTs and CdTe(5)/ZnS(2)/TiO2 NTs, respectively. The CdTe(5)/ZnS(2)/TiO2 NTs photoelectrode could be employed to enhance the effective efficiency in the design of the solar cells.Figure optionsDownload as PowerPoint slideHighlights
► CdTe/ZnS quantum dots sensitized TiO2 nanotube array photoelectrodes were prepared by SILAR method.
► TiO2 NTs/CdTe(5) exhibited excellent photoelectrochemical properties, with an open-circuit voltage of 0.95 V and a short circuit current density of 11.15 mA cm−2.
► The ZnS coating protected the photoelectrodes against photocorrosion.