Growth and characterization of CuSbSe2 thin films prepared by electrodeposition

CuSbSe2 thin films have been prepared by electrodeposition followed by rapid thermal annealing. Cyclic voltammetry tests were firstly used to investigate the electrodeposition mechanism. The most suitable deposition potential for films preparation was determined to be about −0.40 V vs. SCE combining with cyclic voltammetry, composition and morphology analysis. Polycrystalline films with the main phase of CuSbSe2 and secondary phase Sb2Se3 were obtained after rapid thermal annealing for both Cu-rich and Cu-poor thin films. Both films show an optical band gap value of about 1.09 eV. Photoelectrochemical (PEC) characterizations indicate that Cu-poor thin film has the better photoelectrical properties than those of Cu-rich thin film.

► CuSbSe2 thin films are prepared by electrodeposition and post-annealing treatment.
► The electrodeposition mechanism of CuSbSe2 is revealed.
► Cu-poor CuSbSe2 thin film has the better photo-electrical conversion performance.