کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
189971 459690 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
CdS quantum-dot-sensitized Zn2SnO4 solar cell
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
CdS quantum-dot-sensitized Zn2SnO4 solar cell
چکیده انگلیسی

The ternary oxide zinc stannate (Zn2SnO4) nanoparticles are first used as the electrode materials for the quantum dot sensitized solar cells. CdS quantum dots are utilized to sensitize Zn2SnO4 electrode via a chemical bath deposition technique. The covering of ZnS layer, the kinds of conducting substrates and the thickness of film are optimized to improve the cell performance. The optimal film thickness is found to be 6.4 μm, and the electrode prepared at sixth CBD cycle exhibits a highest efficiency of 0.228% under the illumination of 1 sun (AM1.5, 100 mW cm−2).


► Ternary oxide Zn2SnO4 is first used as the electrode material for quantum-dot-sensitized solar cells.
► CdS quantum dots are prepared via chemical bath deposition to sensitize Zn2SnO4 film.
► SEM images confirm the mesopores of Zn2SnO4 films.
► ZnS treated Zn2SnO4 electrode with a film thickness of 6.4 μm exhibits a best performance at sixth cycle with the cell parameters of Jsc = 0.524 mA cm−2, Voc = 0.524 V, FF = 0.526 and η = 0.228% under the illumination of one sun (AM1.5, 100 mW cm−2).

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 56, Issue 13, 1 May 2011, Pages 4902–4906
نویسندگان
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