کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
193196 | 459764 | 2009 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrochemistry of anodic etching of 4H and 6H–SiC in fluoride solution of pH 3
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Electrochemical etching of single-crystal SiC rotating disk electrodes in fluoride solution was studied at pH 3. Anodic dissolution and passivation are observed for p-type electrodes in the dark and for n-type electrodes under illumination. The dissolution of p-type (0 0 0 1) 4H–SiC is found to be under mixed transport/kinetic control; the diffusion current is first order in fluoride concentration. Polishing of p-type electrodes can be achieved at rates up to 5.8 μm/min. Porous etching was not observed in this case. The surface finish of n-type (0 0 0 1) 4H and 6H–SiC depends on the experimental conditions; both uniform and porous etching are observed. The results are compared with those of Si under comparable conditions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 54, Issue 26, 1 November 2009, Pages 6269–6275
Journal: Electrochimica Acta - Volume 54, Issue 26, 1 November 2009, Pages 6269–6275
نویسندگان
D.H. van Dorp, J.J.H.B. Sattler, J.H. den Otter, J.J. Kelly,