کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
194014 | 459783 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Annealing process dependence of the photoluminescence in rare-earth-ion-doped chalcogenide glass
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
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![عکس صفحه اول مقاله: Annealing process dependence of the photoluminescence in rare-earth-ion-doped chalcogenide glass Annealing process dependence of the photoluminescence in rare-earth-ion-doped chalcogenide glass](/preview/png/194014.png)
چکیده انگلیسی
We report on the annealing process dependence of the visible photoluminescence (PL) properties of the Pr3+-doped Ga2S3–GeS2–La2S3 glass, where emission intensities per ion depend not only on the Pr3+ concentration but on the annealing process after glass formation. It is demonstrated that enhancement of the photoluminescence to more than four times the intensity can be achieved through improvement on a procedure in the process. Multiple peaks were observed in the PL, and not only the total intensity but also the relative intensity of each peak was changed. Degree of the intensity enhancement was proved to depend on the excited states.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 53, Issue 1, 20 November 2007, Pages 7–10
Journal: Electrochimica Acta - Volume 53, Issue 1, 20 November 2007, Pages 7–10
نویسندگان
Kan Hachiya, Hideki Ohashi,