کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
194160 | 459785 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of electrode configuration and mode of deposition on magnetoresistance in electrodeposited Co/Cu multilayers on n-Si by a fully electrochemical method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of electrode configuration and mode of deposition on magnetoresistance in electrodeposited Co/Cu multilayers on n-Si by a fully electrochemical method Effect of electrode configuration and mode of deposition on magnetoresistance in electrodeposited Co/Cu multilayers on n-Si by a fully electrochemical method](/preview/png/194160.png)
چکیده انگلیسی
Electrodeposition of metallic multilayers on Si is normally preceded by the vapour deposition of a metallic layer. Since vapour deposition produces an additional step in the production process, direct electrodeposition of multilayers on Si is desirable. However, direct electrodeposition on Si has resulted in low magnetoresistance (MR) – of the order of 1% – at room temperature. With the use of (i) electroless plated copper back contact, (ii) composite potentiostatic pulses, (iii) horizontal electrode configuration and (iv) non-continuous mode of deposition, a room temperature MR of 5.8% has been achieved.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 54, Issue 2, 30 December 2008, Pages 430–433
Journal: Electrochimica Acta - Volume 54, Issue 2, 30 December 2008, Pages 430–433
نویسندگان
Debabrata Pradhan, Thamminana Sripadmini, Pradeep Pradhan, M. Katiyar, R. Shekhar,