Improved leakage current and device uniformity for sub-20 nm N-FinFETs by cryogenic Ge pre-amorphization implant in contact

Improved leakage current and device uniformity for sub-20 nm N-FinFETs by cryogenic Ge pre-amorphization implant in contact

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 178, 25 June 2017, Pages 137-140

Chuan-Pu Chou, Chin-Yu Chen, Kuen-Yi Chen, Shih-Chieh Teng, Yung-Hsien Wu,