کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5005822 1461376 2017 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Pulsed DC magnetron sputtering deposition of crystalline photocatalytic titania coatings at elevated process pressures
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Pulsed DC magnetron sputtering deposition of crystalline photocatalytic titania coatings at elevated process pressures
چکیده انگلیسی
The use of elevated process pressures is described in the magnetron sputter deposition of titanium dioxide photocatalytic coatings to enable the direct low-temperature formation of the most photoactive titania crystal phase; anatase. Most other works on this subject deal with relatively low 'conventional' pressures (0.1-0.5 Pa). However, the present work describes pulsed DC reactive magnetron sputtering deposition of titanium dioxide thin films at process pressures in the range 2-5 Pa in a purpose-built sputtering rig. The influence of the other deposition conditions, such as pulse frequency and duty cycle, is also discussed. Additionally, a series of N-doped titania coatings was produced by using air as the reactive gas. The morphological and compositional properties of the coatings were studied using energy dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Wettability of the films was studied through measurement of water contact angles under UV light irradiation. Photocatalytic properties of the samples were assessed through the degradation of two model pollutants, methylene blue and stearic acid, under UV light irradiation. The results showed that elevated process pressures (4 Pa and above) allow the direct deposition of anatase titania films, without additional heat treatment, while amorphous titania tends to form at lower process pressures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 71, 15 November 2017, Pages 188-196
نویسندگان
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