Effect of post annealing on hole mobility of pseudo-single-crystalline germanium films on glass substrates

We examine electrical properties of pseudo-single-crystalline (PSC) Ge films, formed by modulated Au-induced-crystallization (GIC) method, on glass substrates. Although higher growth temperatures and thicker Au layers in GIC conditions degrade the Hall mobility of holes, the influence of the Au deep centers can be ignored. For the thin film transistors, we find that post annealing in N2 atmosphere enables us to enhance field-effect mobility and the on-off ratios. We discuss the mechanism of the improvement of electrical properties of the PSC-Ge films on the glass substrate.