کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5005891 | 1461377 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si (100) substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructure formed with the defect control by Ar ion implantation was investigated. It was found that compressive strain is sustained up to 900 °C without prominent change in surface roughness. From the X-ray diffraction reciprocal space mapping, it was found that relaxed Si1-xCx layer is stable up to at least 800 °C, and compressively strained Si1-xCx with relatively large thickness is formed by annealing at temperatures higher than 900 °C owing to redistribution of C atoms. These results indicate that the compressively strained Si/relaxed Si1-xCx heterostructure formed by Ar ion implantation technique is available up to at least 800 °C and has a potential to be used at more than 900 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 70, 1 November 2017, Pages 127-132
Journal: Materials Science in Semiconductor Processing - Volume 70, 1 November 2017, Pages 127-132
نویسندگان
You Arisawa, Yusuke Hoshi, Kentarou Sawano, Junji Yamanaka, Keisuke Arimoto, Chiaya Yamamoto, Noritaka Usami,