کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5005903 | 1461377 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Increased doping depth of Al in wet-chemical laser doping of 4H-SiC by expanding laser pulse
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Increased doping depth of Al in wet-chemical laser doping of 4H-SiC by expanding laser pulse Increased doping depth of Al in wet-chemical laser doping of 4H-SiC by expanding laser pulse](/preview/png/5005903.png)
چکیده انگلیسی
Al is doped into 4H-SiC by irradiating pulsed KrF excimer laser to 4H-SiC immersed in AlCl3 aqueous solution. Impact on doping depth of the use of expanded laser-pulse width is investigated. Expanded laser pulse is produced by splitting and recombining the laser beam with mirrors. The laser pulse width was expanded from its original width of 55-100Â ns, while the peak power of the expanded pulse is as half as that of the original pulse under the same laser fluence. Multiple shots of the expanded laser pulses increased the doping depth at the Al concentration of 1Ã1016 /cm3 to 100Â nm from 30Â nm of the single shot of the original short, high-peak power laser. The increased doping depth could be due to enhanced diffusion by extra vacancies generated by the repeated laser irradiations. Due to the smaller laser peak power, the expanded pulse laser can suppress damage generation under multiple laser shots and, as a result, leakage current of the pn junction diode is kept low.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 70, 1 November 2017, Pages 193-196
Journal: Materials Science in Semiconductor Processing - Volume 70, 1 November 2017, Pages 193-196
نویسندگان
Akihiro Ikeda, Daichi Marui, Rikuho Sumina, Hiroshi Ikenoue, Tanemasa Asano,