کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5005923 1461380 2017 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Distributions of substitutional and interstitial impurities in silicon ingot with different grain morphologies
ترجمه فارسی عنوان
توزیع ناخالصی های جایگزین و بینابینی در شمش سیلیکون با مورفولوژی دانه های مختلف
کلمات کلیدی
خنک کننده جهت مورفولوژی دانه، ناخالص داخلی ناخالص اساسی،
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
چکیده انگلیسی
A multicrystalline silicon ingot with columnar and irregular grains was obtained from metallurgical-grade silicon (MG-Si) by directional solidification. The segregation behaviors of substitutional and interstitial impurities in different grain morphologies have been studied. The concentration distribution of substitutional impurities (B and Al) in the silicon ingot was accord with the Scheil's equation, which depended on the grain morphology. However, the concentration distribution of interstitial impurities (Fe, Ti, Cu, and Ni) was only accord with the Scheil's equation under the columnar grains growth condition. The difference lattice sites of the impurities will result in the disparate segregation behavior of impurities for columnar and irregular grains growth, which leads to the diverse concentration distribution of substitutional and interstitial impurities in the silicon ingot. Furthermore, the transport mechanism of interstitial and substitutional impurities in front of the solid-liquid interface boundary has been revealed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 67, 15 August 2017, Pages 1-7
نویسندگان
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