کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5005992 1461378 2017 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Subsurface damage in polishing-annealing processed ZnO substrates
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Subsurface damage in polishing-annealing processed ZnO substrates
چکیده انگلیسی
Positron annihilation spectroscopy and secondary ion mass spectrometry have been applied to study the evolution of polishing-induced defects in hydrothermally grown ZnO samples depending on the annealing temperature. Annealing of the as-grown ZnO wafer at 1200-1500 °C is found to lead to Li accumulation in the sub-surface layer, and significant reduction of Li content in the bulk. Polishing is shown to introduce vacancy complexes involving both VZn and VO. Post-polishing annealing of hydrothermally grown ZnO with removed Li layer at 800°C reduces the concentration of polishing-induced defects below the detection limit.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 69, October 2017, Pages 19-22
نویسندگان
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