کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5006148 1461384 2017 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
On the metallic bonding of GaN-based vertical light-emitting diode
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
On the metallic bonding of GaN-based vertical light-emitting diode
چکیده انگلیسی
In this work, metallic bonding in GaN-based vertical light-emitting diode (VLED) is systematically characterized by using combined methodology of transmission Kikuchi diffraction (TKD) and energy dispersive X-ray spectroscopy (EDS) in a scanning electron microscope (SEM). SEM-based TKD with EDS identifies chemical composition, grain morphology, orientation, and phases at metallic bonding, while transmission electron microscopy (TEM) provides nanoscale characteristics of metallic diffusion bonding, and its interface-related defects and nano-twinned boundaries. Our results from SEM-TKD and TEM techniques provide unparalleled insight into the metallic bonding, and its future optimization.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 63, 1 June 2017, Pages 237-247
نویسندگان
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