کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5006149 | 1461384 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Schottky performance variation on r-plane and c-plane of GaN micro truncated-pyramid grown by selective area MOCVD
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
The electric properties of Pt Schottky contacts on semipolar r-plane and polar c-plane of GaN micro truncated-pyramid are compared. The Schottky diodes of the inclined r-plane sample illustrate a relatively inferior rectified performance than that of the top c-plane GaN in term of the lower Schottky barrier heights, larger ideality factor and reverse leakage current. By depositing Pt metal on the dislocation-free area of the top of GaN micro pyramid, the Schottky performance of r-plane GaN can be slightly improved, but still shows much larger reverse leakage current than that of c-plane GaN. It is found that polarization-related surface states and incorporation of donor impurities, rather than dislocation, should mainly contribute to this remarkable electric discrepancy of the planes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 63, 1 June 2017, Pages 248-252
Journal: Materials Science in Semiconductor Processing - Volume 63, 1 June 2017, Pages 248-252
نویسندگان
Jie Chen, Xiaobiao Han, Puman Huang, Weijie Chen, Jiezhi Liang, Changming Zhong, Zhengzhou Pan, Zhisheng Wu, Yang Liu, Baijun Zhang,