کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5006165 1461385 2017 18 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Dopant, composition and carrier profiling for 3D structures
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Dopant, composition and carrier profiling for 3D structures
چکیده انگلیسی
The application of these SPM methods for 3D structures and confined volumes has demonstrated that the changing surface/volume ratio in confined devices leads to various phenomena (e.g. dopant deactivation, enhanced diffusion,..) which are not observed in blanket sample experiments. More emphasis should therefore be placed on the analysis of devices and structures with the relevant dimensions relative to the exploration of blanket experiments. Thus, the metrology concepts addressed in this paper may be very useful for such investigations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 62, May 2017, Pages 31-48
نویسندگان
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