کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5006192 1461387 2017 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Efficient defect identification of soft failures induced by device local mismatch for nano-scale SRAM yield improvement
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Efficient defect identification of soft failures induced by device local mismatch for nano-scale SRAM yield improvement
چکیده انگلیسی
As the device size continues shrinking to nano-scale region, tiny defects induced device local mismatch in SRAM array becomes a major yield limiter. It is often quite time consuming and challenging to identify such kind of invisible defects through conventional FA techniques. This paper presents an efficient methodology on device local mismatch fault isolation with the combination of test features, advanced Electrical Failure Analysis (EFA) and Physical Failure Analysis (PFA) techniques. A successful case study involving this advanced methodology will be also discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 60, 15 March 2017, Pages 79-87
نویسندگان
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