A study of ultrasonic spray pyrolysis deposited rutile-TiO2-based metal-semiconductor-metal ultraviolet photodetector

This work uses ultrasonic spray pyrolysis deposition to grow the TiO2 film on a Si substrate. The TiO2 film was annealed at 800 °C for 2 h to form rutile phase. X-ray diffraction, Raman spectrum, X-ray photoelectron spectroscopy were used to characterized rutile phase TiO2. The optical characteristics like refractive index, extinction coefficient and absorption coefficient were measured. The rutile TiO2-based metal-semiconductor-metal ultraviolet photodetector was fabricated and investigated, including current-voltage characteristic, photoresponsivity, external quantum efficiency, response time, noise equivalent power, and detectivity.