کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5006237 | 1461390 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of thiol capped CdSe quantum dots using SeO2 precursor for selenium source
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
CdSe quantum dots in aqueous medium using thioglycollic acid as capping agent have been synthesized. The reaction was carried out in an open atmosphere at pH of 12 and refluxed at 100 °C for 8 h. Selenium dioxide which is less expensive and less toxic has been used as a precursor for selenium source by replacing Se powder and sodium selenite. For characterization QD solutions was taken at different time intervals ranging from 15 min to 6 h. UV-Vis spectroscopy shows that there is a strong blue shift in the prepared quantum dots due to quantum confinement effect. Band gap calculated at different time intervals lies between 2.34 and 2.73 eV which is more than the bulk band gap 1.74 eV and with the increase in size of the QDs, bandgap also decreases. Photoluminescence study was carried out at excitation wavelength of 350 nm and results shows that with increase in time the peak position shift toward higher wavelength. FTIR spectroscopy shows peaks of thioglycollic acid. SEM micrographs of the prepared quantum dots show zero dimensional spherical particles in nm range. For electrical conductivity dc conductivity measurement has been done which shows that with increase of temperature conductivity increases, it confirms the semiconducting nature of the quantum dot. Conduction mechanism found to be mainly due to localized states.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 57, January 2017, Pages 190-196
Journal: Materials Science in Semiconductor Processing - Volume 57, January 2017, Pages 190-196
نویسندگان
Zubair M.S.H. Khan, Shamshad A. Khan, M. Zulfequar,