کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5006276 | 1461392 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
We report on the electron beam induced current (EBIC) investigation of GaN nanowires grown on n-doped Si (111) substrates. The objective of this study is to acquire information about the modifications of the substrate properties induced by the wire growth. We show that the growth procedure using deposition of an ultra-thin AlN layer prior to the nanowire growth step leads to the formation of a p-n junction in the Si substrate with a high surface conductivity. The induced p-n junction exhibits a photoresponse over the spectral range from 360Â nm to 1100Â nm. The properties of the induced p-n junction are investigated on the cross section and in a top view configuration with EBIC microscopy. For a localized contact of the GaN nanowires, the collection range in Si extends over a few millimeters. The treatment of the surface using reactive ion etching with a CHF3 plasma leads to the inhibition of the surface conductivity and to the appearance of an S-shape in the current-voltage characteristics under illumination. The conversion efficiency of the plasma-treated sample under AM1.5G solar spectrum is estimated to be in the 2.1-2.7% range.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 55, 15 November 2016, Pages 72-78
Journal: Materials Science in Semiconductor Processing - Volume 55, 15 November 2016, Pages 72-78
نویسندگان
Vladimir Neplokh, Ahmed Ali, François H. Julien, Martin Foldyna, Ivan Mukhin, George Cirlin, Jean-Christophe Harmand, Noëlle Gogneau, Maria Tchernycheva,