کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5010183 | 1462196 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
In this paper, we report a promising approach for the gate recess process with a suppressed current collapse in GaN-based high electron mobility transistors (HEMTs) by means of neutral beam (NB). A recessed gate structure has been widely studied as a way to realize normally-off operation in GaN, InP, and GaAs-based HEMTs. Since GaN-based materials are usually etched by dry process, plasma-induced damage is a serious concern. NB is free from electrical charges and UV photons, resulting in an accurate control of etching depth and less plasma-induced damages. In this work, we introduce NB irradiation to the gate interface and measured DC and gate-pulsed output characteristics. The results suggest that NB is applicable for the gate recess etching with suppressing the current collapse.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 137, November 2017, Pages 1-5
Journal: Solid-State Electronics - Volume 137, November 2017, Pages 1-5
نویسندگان
Fuyumi Hemmi, Cedric Thomas, Yi-Chun Lai, Akio Higo, Yoh Watamura, Seiji Samukawa, Taiichi Otsuji, Tetsuya Suemitsu,