کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5349310 | 1503615 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Room-temperature selective epitaxial growth of CoO (1Â 1Â 1) and Co3O4 (1Â 1Â 1) thin films with atomic steps by pulsed laser deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Room-temperature selective epitaxial growth of CoO (1Â 1Â 1) and Co3O4 (1Â 1Â 1) thin films with atomic steps by pulsed laser deposition Room-temperature selective epitaxial growth of CoO (1Â 1Â 1) and Co3O4 (1Â 1Â 1) thin films with atomic steps by pulsed laser deposition](/preview/png/5349310.png)
چکیده انگلیسی
Cobalt oxide epitaxial thin films of both rock-salt CoO and spinel Co3O4 were selectively synthesized on atomically stepped α-Al2O3 (0 0 0 1) substrates at room temperature under well-controlled oxygen pressures by pulsed laser deposition. X-ray diffraction and reflection high-energy electron diffraction analyses demonstrated that the CoO and Co3O4 films were grown with phase control and good epitaxial quality at room temperature (20 °C). The CoO (1 1 1) film was obtained in ultra-high vacuum of 1 Ã 10â8 Torr, while the Co3O4 (1 1 1) film was grown in 1 Ã 10â2 Torr of O2. X-ray reciprocal space mapping results indicated that the in-plane mismatches of the {1 = 10} planes of CoO (1 1 1) and Co3O4 (1 1 1) films with the substrate were 4.5% and 2.5%, respectively. The films were almost entirely relaxed with ratios of expansion less than ±2%; the films underwent slight elongation along the [1 1 1] axis and shrinkage in the (1 1 1) plane. The surfaces of the as-grown CoO and Co3O4 thin films revealed atomic steps reflective of those on the substrates. Their root-mean-square roughness values were about 0.1 nm indicating suppressed grain growth on the substrates at room temperature. The optical bandgap of the epitaxial CoO (1 1 1) film was estimated to be 2.72 eV accompanied with a broad absorption attributable to non-stoichiometry or d-d transition. The bandgap of the Co3O4 (1 1 1) film was evaluated as 1.42 eV, and also absorption at 1.86 eV was observed. The obtained room-temperature epitaxial growth of CoO and Co3O4 thin films contributes to enhance their catalytic ability and quality of layer-stacking devices in terms of improving surface/interface flatness and specific surface area.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 349, 15 September 2015, Pages 78-82
Journal: Applied Surface Science - Volume 349, 15 September 2015, Pages 78-82
نویسندگان
Akifumi Matsuda, Ryosuke Yamauchi, Daishi Shiojiri, Geng Tan, Satoru Kaneko, Mamoru Yoshimoto,