کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5367226 | 1388363 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High-throughput synthesis and characterization of Mg1âxCaxO films as a lattice and valence-matched gate dielectric for ZnO based field effect transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Using composition-spread technique, we have grown metastable Mg1âxCaxO solid solution films on ZnO layers by pulsed laser deposition. All the films exhibited (1 1 1) oriented cubic phase. Despite a large miscibility gap, no phase separation took place at growth temperatures up to 700 °C, whereas an optimal growth temperature was found at 400 °C in terms of the crystallinity. The composition-spread films were characterized by X-ray diffraction mapping technique. Both lattice parameters and diffraction intensity increased with increasing the CaO composition. The present isovalent heterointerfaces realized the perfect lattice-matching by properly adjusting the CaO composition, leading to particular interest for ZnO based field effect transistors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 7, 31 January 2006, Pages 2507-2511
Journal: Applied Surface Science - Volume 252, Issue 7, 31 January 2006, Pages 2507-2511
نویسندگان
J. Nishii, A. Ohtomo, M. Ikeda, Y. Yamada, K. Ohtani, H. Ohno, M. Kawasaki,