کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
539043 | 1450353 | 2014 | 6 صفحه PDF | دانلود رایگان |
• A novel sputter with directional beam target (DBT) and Lisitano ECR antenna for Cu seed/barrier is designed and tested.
• Deposition characteristics of DBT show superior step coverage with no other significant degradation against planar target.
• DBT sidewall uniformity is ±17% for 6:1 aspect ratio trench, which is far better than commercial leading edge sputters.
• The uniformity of 300 mm Endura CuBS PVD (SIP EnCoRe II Cu) and INOVA® NExT (HCM® IONX™ XL) are ±45.5% and ±40.3%.
• The technology can be scaled through proper ratio of DBT to meet future generation Cu technology.
A noble sputter with radical step coverage improvement using directional beam target technology is presented. Sidewall non-uniformity is ±17% for 6:1 aspect ratio trench, which is a drastic improvement from the compared profiles of 300 mm Endura CuBS PVD (SIP EnCoRe II Cu) ±45.5% and INOVA® NExT (HCM® IONX™ XL) ±40.3% without sacrificing other deposition characteristics. The technology can be scaled through proper ratio of DBT to meet future generation Cu technology. The system is also relatively simple configuration and is a good alternative solution.
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Journal: Microelectronic Engineering - Volume 128, 5 October 2014, Pages 85–90