Heterogeneous integration of ReRAM crossbars in 180 nm CMOS BEoL process

• TiN/Ta/TaOx/TiN-based ReRAMs compatible with CMOS processes are fabricated.
• An integration method is applied to achieve chip level ReRAM–CMOS integration.
• The measured ReRAM integrated cells are suitable for low-voltage applications.

This work reports on a heterogeneous integration of resistive memories into the Back-End-of-the-Line of 180 nm standard CMOS foundry chips. A TaOx-based ReRAM technology with materials and processes fully CMOS compatible has been developed and characterized. A low-cost integration method is applied to the developed TaOx-based memories to achieve chip level ReRAM–CMOS integration. The integrated memory devices show working voltages compatible with CMOS circuits operations. Measured SET and RESET voltages of the ReRAM integrated cells are −1 V and +1.3 V, respectively, demonstrating suitability for low-voltage applications.

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