Organic bistable memory device from natural rubber (cis 1,4 polyisoprene)/fullerene nanocomposite thin films

Memory devices based on C60 fullerene molecules and a polydiene, cis 1,4 polyisoprene (natural rubber) are described and their current bistability and switching characteristics during write–read–erase cycles are discussed. It is found that natural rubber nanocomposite with a fullerene content even as low as 0.1% exhibit bistability and switching behavior. Multiple tunneling and coulomb blockade effect along with dipolar carrier trapping are identified as the possible reasons for this current bistability.

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• An innovative microelectronics application for 1,4 polyisoprene (natural rubber).
• A weight content as low as 1 wt.% of fullerene in rubber make it electrically bistable.
• This bistability of the rubber nano composite can be used to perform read–write–erase functions.
• Multiple tunneling, coulomb blockade effect, and dipolar carrier trapping causes bistability.