Atom probe tomography of SRAM transistors: Specimen preparation methods and analysis

Different FIB-based sample preparation methods for atom probe analysis of transistors have been proposed and discussed. A special procedure, involving device deprocessing, has been used to analyze by APT a sub-30 nm transistor extracted from a SRAM device. The analysis provides three dimensional compositions of Ni-silicide contact, metal gate and high-k oxide of the transistor gate.

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► We discussed several sample preparation methods for APT analysis of transistors.
► The more effective method consists in deprocessing the device prior to FIB-milling.
► We analyzed by APT a sub-30 nm transistor extracted from a SRAM device.
► We obtained 3D chemical compositions of the transistor gate.