Ag contact on sol–gel processed MgZnO film

The contact characteristics of Ag on a sol–gel processed MgZnO thin film is presented in the paper. Both of the material properties of the sol–gel ZnO films and the electrical characteristics of the Schottky diode are addressed in the paper. The structure of the MgZnO film is confirmed by X-ray diffraction analysis and the MgZnO film exhibits a hexagonal wurtzite-type polycrystalline. The optical bandgap of the film is determined by using transmittance spectra and is found to be 3.42 eV. The Ag/MgZnO diode shows a barrier height of 0.78 eV with an ideality factor value of 1.21 and a reverse current of 3.39 × 10−4 A/cm2 at −3 V. The Cheung’s function is also used to determine the parameters of the diode. The series resistance with a value of 1.38 × 104 Ω is evaluated.

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► Presenting a new Schottky diode, Ag contact on a sol–gel processed MgZnO thin film.
► The diode characteristics are better than that of MgZnO based Schottky diode.
► A high quality of MgZnO thin film was evaluated.