کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
539558 | 1450360 | 2014 | 4 صفحه PDF | دانلود رایگان |
• Pure nickel was deposited in vacuum as the catalyst.
• The Orange II (Acid Orange 7, C16H11N2NaO4S) was coated on the Ni/SiO2/Si surface by the dipping.
• We propose an easy way to form graphene by dip-coating.
• This method enables us to form graphene quickly with low cost.
Monolayer graphene and graphite thin films were fabricated on SiO2/Si substrates by organic coating and post annealing. Pure nickel (Ni) was deposited on the substrate surface as the catalyst. Then the samples were dipped in the Orange II organic solution. Raman spectroscopy measurements suggested that the Orange II organic solution resolved on the Ni surface and formed graphene and graphite thin layers during the heating process.
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Journal: Microelectronic Engineering - Volume 121, 1 June 2014, Pages 96–99