Single-spot e-beam lithography for defining large arrays of nano-holes

• We use the single-spot electron beam strategy with a focused Gaussian beam.
• The serial technique is optimized on the JEOL JBX-9500FS 100 keV prototype.
• A maximum writing speed of around 30 min/cm2 is found for 200 nm array periods.
• The trade-off between high current and large writing field is examined.

Efficient nanoscale patterning of large areas is required for sub-wavelength optics. Here we use the single-spot exposure strategy, where electron beam lithography (EBL) with a focused Gaussian beam is used to define shapes directly. The serial technique is optimized on the JEOL JBX-9500FS 100 keV prototype EBL system for speed and pattern fidelity to a minimum writing time of around 30 min/cm2 for 200 nm periods in 2D lattices. The machine time and feasibility of the method are assessed in terms of the trade-off between high current and large writing field.

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