Cerium oxide stoichiometry alteration via Sn deposition: Influence of temperature

Cerium oxide layers grown on Cu(1 1 1) were studied by conventional X-ray and resonant photoelectron spectroscopy with synchrotron radiation. A quantitative method of determining the cerium chemical state from the Ce 3d photoelectron spectra is described in detail. After the preparation of the ceria layer, Sn films of different thickness were evaporated onto the surface at temperatures of 120, 300 and 520 K. In all three cases, the deposited Sn was oxidized, CeO2 was partially reduced, and a mixed Sn-Ce-O oxide was formed. The quantitative extent of these reactions was found to be determined by limited diffusion of the deposited Sn atoms into the ceria layer at low temperature. The excess of tin formed a metallic overlayer on the sample surface.