کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5397115 1505775 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structural and electronic analysis of Hf on Si(1 1 1) surface studied by XPS, LEED and XPD
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Structural and electronic analysis of Hf on Si(1 1 1) surface studied by XPS, LEED and XPD
چکیده انگلیسی
In this work, we present a systematic electronic and structural study of the Hf-silicide formation upon annealing on Si(1 1 1) surface. The electronic structure and surface composition were determined by X-ray photoelectron spectroscopy (XPS) and angle-resolved X-ray photoelectron spectroscopy (ARXPS). To determine the atomic structure of the surface alloy we used low energy electron diffraction (LEED) and angle-resolved photoelectron diffraction (XPD). It was possible to verify that, after 600 °C annealing, there is alloy formation and after 700 °C the Hf diffusion process is predominant. Using LEED and XPD measurements we detected the ordered island formation simultaneously with alloy formation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volumes 156–158, May 2007, Pages 393-397
نویسندگان
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